technical data npn silicon low power transistor qualified per mil - prf - 19500/376 devices qualified level 2n2484 jantx jantxv maximum ratings ratings symbol 2n2484 unit collector - emitter voltage v ceo 60 vdc collector - base voltage v cbo 60 vdc emitter - base voltage v ebo 6.0 vdc collector current i c 50 madc total power dissipation @ t a = +25 0 c (1) @ t c = +25 0 c (2) p t 360 1.2 mw w operating & storage junction temperature range t j , t stg - 65 to +2 00 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc 146 0 c/w 1) derate linearly 2.06 mw/ 0 c above t a = +25 0 c 2) derate linearly 6.85 mw/ 0 c above t c = +25 0 c to - 18* (to - 206aa) *see append ix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown current i c = 10 madc v (br) ceo 60 vdc collector - emitter cutoff current v ce = 45 vdc i ces 5.0 h adc collector - base cutoff current v cb = 45 vdc v cb = 60 vdc i cbo 5.0 10 h adc m adc collector - emitter cutoff current v ce = 5.0 vdc i ceo 2.0 h adc emitter - base cutoff current v eb = 5.0 vdc v eb = 6.0 vdc i ebo 2.0 10 h adc m adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2n 2484 jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (3) forward - current transfer ratio i c = 1.0 m adc, v ce = 5.0 vdc i c = 10 m adc, v ce = 5.0 vdc i c = 100 m adc, v ce = 5.0 vdc i c = 500 m adc, v ce = 5.0 vdc i c = 1.0 madc, v ce = 5.0 vdc i c = 10 madc, v ce = 5.0 vdc h fe 45 200 225 250 250 225 500 675 800 800 800 collector - emitter saturation voltage i c = 1.0 madc, i b = 100 m adc v ce(sat) 0.3 vdc base - emitter voltage v ce = 5.0 vdc, i c = 100 m adc v be 0.5 0.7 vdc dynamic characteristic s forward current transfer ratio i c = 50 m adc, v ce = 5.0 vdc, f = 5.0 mhz i c = 500 m adc, v ce = 5.0 vdc, f = 30 mhz ? h fe ? 3.0 2.0 7.0 open circuit output admittance i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz h oe 40 m mhos open circuit revers e - voltage transfer ratio i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz h re 8.0x10 - 4 input impedance i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz h ie 3.5 24 k w small - signal short - circuit forward current transfer ratio i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz h fe 250 900 output capacitance v cb = 5.0 vdc, i e = 0, 100 khz f 1.0 mhz c obo 5.0 pf input capacitance v eb = 0.5 vdc, i c = 0, 100 khz f 1.0 mhz c ibo 6.0 pf (3) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake str eet, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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